Technology:
Japanese
leading companies including Panasonic and Japanese leading universities
including Osaka University will jointly develop a mass production technology of
energy-saving power semiconductors with the support of the government. Utilizing
the technology to generate gallium nitride crystals developed by Osaka
University, the project aims to strengthen Japan’s competitive edge in the power
semiconductor where Japan currently has 60% share.
The
maximum diameter of a wafer is 4.5 inches at the present stage, and the project
plans to increase the diameter to 6.0 inches in two years under the initiative
of Hitachi Metals. A power semiconductor larger than 6.0 inches in diameter will
realize efficient production and lower production cost. In addition, it will
reduce energy loss incurred in the exchange from alternate current to direct
current to less than 6% of the present level. The technology involved in the
development of gallium nitride can be applied to LED. The government estimates
that spreading power semiconductors will make it possible to reduce power consumption
corresponding to that of 8 million households. It has allocated about 1,400
million yen for the project for 2015 and will continue to fund it in 2016.
The highly efficient SIC power semiconductor
released by Toyota on May 20, 2014
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