Sunday, January 8, 2012

No. 405: A semiconductor made of monocrystalline gallium oxide-based substrate for transistor (January 9, 2012)

A transistor that uses a semiconductor with monocrystalline gallium oxide-based substrate has higher pressure resistance and lower loss than the widespread transistor that uses a semiconductor with silicon-based substrate. National Institute of Information and communicationsTechnology succeeded in the validation of the new transistor for the first time in the world in alliance with Tamura and Koha. The new transistor is expected to realize device characteristics more efficient and higher in performance should it be applied to the power device of semiconductor element for electricity apparatus. The research team opened up the road to the practical application of the next-generation power device for the solution of energy-saving issues.

If gallium oxide is applied to power devices, it will help reduce the loss associated with switching operation. In addition, gallium oxide-based semiconductors will require considerably lower cost and energy in production than the existing wide-gap semiconductors based on silicon carbide and gallium nitride. It will be applied to a wide range of devices ranging from high-voltage electric power cable to low and medium withstand pressure devices for hybrid vehicles and home electric appliances. Tamura plans to commercialize the new transistor in five years.

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