Technology
A transistor that uses a semiconductor with
monocrystalline gallium oxide-based substrate has higher pressure resistance
and lower loss than the widespread transistor that uses a semiconductor with
silicon-based substrate. National Institute of Information and communicationsTechnology succeeded in the validation of the new transistor for the first time
in the world in alliance with Tamura and Koha. The new transistor is expected
to realize device characteristics more efficient and higher in performance
should it be applied to the power device of semiconductor element for
electricity apparatus. The research team opened up the road to the practical
application of the next-generation power device for the solution of energy-saving
issues.
If gallium oxide is applied to power
devices, it will help reduce the loss associated with switching operation. In
addition, gallium oxide-based semiconductors will require considerably lower
cost and energy in production than the existing wide-gap semiconductors based
on silicon carbide and gallium nitride. It will be applied to a wide range of
devices ranging from high-voltage electric power cable to low and medium
withstand pressure devices for hybrid vehicles and home electric appliances.
Tamura plans to commercialize the new transistor in five years.
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