NGK Insulators confirmed that the gallium nitride wafer it developed with Hiroshi Amano of Nagoya University doubles the luminous efficiency of a green light emitting diode as compared with the existing green light emitting diode.
In the experiment of a green light emitting diode that uses the newly developed gallium nitride wafer, the internal quantum efficiency that shows luminous efficiency doubled to 60%. The company has already achieved luminous efficiency of 90% in blue light emitting diode. The company plans to quintuple the monthly production capacity of gallium nitride wafers to 1,000 pieces in 2013. Please click here to read detailed information.
NGK Insulators successfully doubled the
luminous efficiency of a green LED