Thursday, August 12, 2010
No. 131: Next-generation power semiconductor featured by reduced power loss (August 13, 2010)
Fuji Electric and Furukawa Electric jointly developed the new-generation power semiconductor. Made of gallium nitride, it is featured by small power loss one tenth of the power loss of the existing semiconductor made of silicone. Because it controls current sensitively, it can reduce energy consumed by electric vehicles and electronic devices. The two companies will start to evaluate the performance and reliability of this new product. Sample shipment will start in 2011. Fuji Electric has been working with National Institute of Advanced Industrial Science and Technology to develop a semiconductor made of silicon carbide, and started sample shipment this summer. Because silicon carbide-based semiconductor is more expensive than gallium nitride-based semiconductor, it is for electric trains and high-voltage equipment. Power semiconductors useful to reduce energy consumption are in great demand worldwide. Fuji Electric plans to put these two kinds of semiconductor into practical use as soon as possible.